Paper Title:
Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF6/O2 Plasma
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
953-956
DOI
10.4028/www.scientific.net/MSF.389-393.953
Citation
B. S. Kim, J. K. Jeong, M. Y. Um, H. J. Na, I. B. Song, H. J. Kim, "Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF6/O2 Plasma", Materials Science Forum, Vols. 389-393, pp. 953-956, 2002
Online since
April 2002
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