Paper Title:
Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
967-972
DOI
10.4028/www.scientific.net/MSF.389-393.967
Citation
J. R. Williams, G.Y. Chung, C. C. Tin, K. McDonald, D. Farmer, R.K. Chanana, R. A. Weller, S. T. Pantelides, O.W. Holland, M. K. Das, L. C. Feldman, "Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide", Materials Science Forum, Vols. 389-393, pp. 967-972, 2002
Online since
April 2002
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