Paper Title:
Passivation of the Oxide/4H-SiC Interface
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
973-976
DOI
10.4028/www.scientific.net/MSF.389-393.973
Citation
P. Jamet, S. Dimitrijev, P. Tanner, "Passivation of the Oxide/4H-SiC Interface", Materials Science Forum, Vols. 389-393, pp. 973-976, 2002
Online since
April 2002
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Price
$32.00
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