Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
977-980 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.977 |
| Citation |
C.Y. Lu et al., 2002, Materials Science Forum, 389-393, 977 |
| Authors |
C.Y. Lu, James A. Cooper, G.Y. Chung, John R. Williams, K. McDonald, Leonard C. Feldman |
| Keywords |
Inversion, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Mobility, NO Annealing, Process, Silicon Carbide (SiC) |
| Full Paper |
Get the full paper by clicking here
|
