Paper Title:
Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
977-980
DOI
10.4028/www.scientific.net/MSF.389-393.977
Citation
C.Y. Lu, J. A. Cooper, G.Y. Chung, J. R. Williams, K. McDonald, L. C. Feldman, "Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities", Materials Science Forum, Vols. 389-393, pp. 977-980, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.