Paper Title:
High-Current, NO-Annealed Lateral 4H-SiC MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
981-984
DOI
10.4028/www.scientific.net/MSF.389-393.981
Citation
M. K. Das, G.Y. Chung, J. R. Williams, N.S. Saks, L. A. Lipkin, J. W. Palmour, "High-Current, NO-Annealed Lateral 4H-SiC MOSFETs", Materials Science Forum, Vols. 389-393, pp. 981-984, 2002
Online since
April 2002
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