Paper Title:
High-Current, NO-Annealed Lateral 4H-SiC MOSFETs
| Periodical | Materials Science Forum (Volumes 389 - 393) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2001 |
| Edited by | S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages | 981-984 |
| DOI | 10.4028/www.scientific.net/MSF.389-393.981 |
| Citation | Mrinal K. Das et al., 2002, Materials Science Forum, 389-393, 981 |
| Authors | Mrinal K. Das, G.Y. Chung, John R. Williams, N.S. Saks, Lori A. Lipkin, John W. Palmour |
| Keywords | 4H-SiC, Channel Mobility, Hall-Effect, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), MOS, NO |
| Price | US$ 28,- |
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