Paper Title:
N2O Processing Improves the 4H-SiC:SiO2 Interface
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
985-988
DOI
10.4028/www.scientific.net/MSF.389-393.985
Citation
L. A. Lipkin, M. K. Das, J. W. Palmour, "N2O Processing Improves the 4H-SiC:SiO2 Interface", Materials Science Forum, Vols. 389-393, pp. 985-988, 2002
Online since
April 2002
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Price
$32.00
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