Paper Title:
Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature Oxidation
| Periodical |
Materials Science Forum (Volumes 389 - 393)
|
| Main Theme |
Silicon Carbide and Related Materials 2001
|
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
989-992 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.989 |
| Citation |
Eiichi Okuno et al., 2002, Materials Science Forum, 389-393, 989 |
| Authors |
Eiichi Okuno, Shinji Amano |
| Keywords |
4H-SiC, High Temperature Oxidation, Interface States (or Traps) |
| Price |
US$ 28,- |