Paper Title:
Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature Oxidation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
989-992
DOI
10.4028/www.scientific.net/MSF.389-393.989
Citation
E. Okuno, S. Amano, "Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature Oxidation", Materials Science Forum, Vols. 389-393, pp. 989-992, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.