Paper Title:

Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature Oxidation

Periodical Materials Science Forum (Volumes 389 - 393)
Main Theme Silicon Carbide and Related Materials 2001
Edited by S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages 989-992
DOI 10.4028/www.scientific.net/MSF.389-393.989
Citation Eiichi Okuno et al., 2002, Materials Science Forum, 389-393, 989
Authors Eiichi Okuno, Shinji Amano
Keywords 4H-SiC, High Temperature Oxidation, Interface States (or Traps)
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