Paper Title:
Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
993-996
DOI
10.4028/www.scientific.net/MSF.389-393.993
Citation
X. W. Wang, H.M. Bu, B.L. Laube, C. Caragianis-Broadbridge, T.P. Ma, "Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing", Materials Science Forum, Vols. 389-393, pp. 993-996, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.