Paper Title:
Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
997-1000
DOI
10.4028/www.scientific.net/MSF.389-393.997
Citation
Y. Maeyama, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, T. Shirafuji, "Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment", Materials Science Forum, Vols. 389-393, pp. 997-1000, 2002
Online since
April 2002
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Price
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