HOME CONTACT My eBook

Username: Password:

> @scientific.net

Silicon Carbide and Related Materials 2001

Materials Science Forum Volumes 389 - 393

• Papers
• Abstracts
• buy eBook

• p131 Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method   [ 200 K ]
  Authors: Thomas L. Straubinger, Matthias Bickermann, Michael Rasp, Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker
• p135 Resistivity Mapping of Semi-Insulating 6H-SiC Wafers   [ 369 K ]
  Authors: Matthew D. Roth, V.D. Heydemann, W.C. Mitchel, Nikolay K. Yushin, M. Sharma, Shao Ping Wang, Cengiz M. Balkas
• p139 On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals   [ 302 K ]
  Authors: Matthias Bickermann, Dieter Hofmann, Thomas L. Straubinger, Roland Weingärtner, Albrecht Winnacker
• p143 Solid-Phase Epitaxial Growth of Bulk SiC Single Crystals   [ 249 K ]
  Authors: Etienne Pernot, Michel Pons, Mikhail Anikin, O. Chaix-Pluchery, Francis Baillet, Igor Matko, Roland Madar
• p147 Full Si Wafer Conversion into Bulk 3C-SiC   [ 296 K ]
  Authors: André Leycuras, Olivier Tottereau, Patrice Vicente, L.A. Falkovsky, P. Girard, Jean Camassel
• p151 QuaSiC Smart-Cut Substrates for SiC High Power Devices   [ 227 K ]
  Authors: Fabrice Letertre, E. Jalaguier, Lea Di Cioccio, Francois Templier, Jean Marie Bluet, C. Banc, Igor Matko, Bernard Chenevier, Edwige Bano, Gérard Guillot, Thierry Billon, B. Aspar, Roland Madar, B. Ghyselen
• p155 CVD SiC Powder for High-Purity SiC Source Material   [ 214 K ]
  Authors: Sashiro Ezaki, M. Saito, K. Ishino
• p159 Direct Synthesis and Growth of SiC Single Crystal from Ultrafine Particle Precursor   [ 247 K ]
  Authors: Yoshimitsu Yamada, Kazukiyo Sagawa
• p165 Recent Achievements and Future Challenges in SiC Homoepitaxial Growth   [ 455 K ]
  Authors: Tsunenobu Kimoto, S. Nakazawa, Keiko Fujihira, T. Hirao, Shun-ichi Nakamura, Yi Chen, K. Hashimoto, Hiroyuki Matsunami
• p171 Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers   [ 219 K ]
  Authors: Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Kunikaza Izumi
• p175 Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD   [ 224 K ]
  Authors: Keiko Fujihira, Tsunenobu Kimoto, Hiroyuki Matsunami
• p179 High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor   [ 200 K ]
  Authors: Koh Masahara, Tetsuo Takahashi, Mitsuhiro Kushibe, Takaya Ohno, Johji Nishio, Kazutoshi Kojima, Yuuki Ishida, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai
• p183 Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition   [ 196 K ]
  Authors: Shun-ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami
• p187 Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation   [ 359 K ]
  Authors: Adolf Schöner, Andrey O. Konstantinov, S. Karlsson, R. Berge
• p191 Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation   [ 291 K ]
  Authors: Jie Zhang, Urban Forsberg, M. Isacson, Alexsandre Ellison, Anne Henry, Olof Kordina, Erik Janzén