Influence of the Semiconductor Doping Level on the Carrier Surface Density in an AlGaN/GaN MODFET Channel |
| Journal |
Materials Science Forum (Volume 413) |
| Volume |
Contemporary Studies in Advanced Materials and Processes |
| Edited by |
Dragan P. Uskokovic, Giovani A. Battiston, Slobodan K. Milonjic, Dejan I. Rakovic |
| Pages |
39-44 |
| DOI |
10.4028/www.scientific.net/MSF.413.39 |
| Citation |
R. Šašić et al., 2002, Materials Science Forum, 413, 39 |
| Authors |
R. Šašić, D. Čevizović, R.M. Ramović |
| Keywords |
2DEG Density, Carrier Concentration Profile, MODFETs, Quantum Correction, Thermal Emission, Wigner Distribution Function |
| Full Paper |
Get the full paper by clicking here
|
