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Silicon Carbide and Related Materials - 2002

Materials Science Forum Volumes 433 - 436

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• p4 Sponsors and Committees   [ 32 K ]
• p6 Preface   [ 18 K ]
• p8 Overview   [ 13 K ]
• p3 Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate   [ 307 K ]
  Authors: Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta
• p9 Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, ¹³C Labeling of Source Material and Numerical Modeling   [ 273 K ]
  Authors: Peter J. Wellmann, Z.G. Herro, M. Selder, F. Durst, Roland Püsche, Martin Hundhausen, Lothar Ley, Albrecht Winnacker
• p13 Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method   [ 499 K ]
  Authors: Shinichi Nishizawa, Yumi Michikawa, Tomohisa Kato, Fusao Hirose, Naoki Oyanagi, Kazuo Arai
• p17 On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates   [ 157 K ]
  Authors: D. Schulz, M. Lechner, H. J. Rost, D. Siche, Jürgen Wollweber
• p21 Growth of High Quality p-Type 4H-SiC Substrates by HTCVD   [ 2 M ]
  Authors: Björn Sundqvist, Alexsandre Ellison, A.K. Jonsson, Anne Henry, Christer Hallin, Peder Bergman, Björn Magnusson, Erik Janzén
• p25 Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation   [ 41 K ]
  Authors: Didier Chaussende, Francis Baillet, Ludovic Charpentier, Etienne Pernot, Michel Pons, Roland Madar
• p29 Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation   [ 3 M ]
  Authors: E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, Yu.A. Vodakov, S.Yu. Karpov, Yu.A. Makarov, H. Helava
• p33 HTCVD Grown Semi-Insulating SiC Substrates   [ 814 K ]
  Authors: Alexsandre Ellison, Björn Magnusson, Nguyen Tien Son, L. Storasta, Erik Janzén
• p39 Sublimation-Grown Semi-Insulating SiC for High Frequency Devices   [ 327 K ]
  Authors: Stephan G. Müller, M.F. Brady, W.H. Brixius, R.C. Glass, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John J. Palmour, Calvin H. Carter Jr.
• p45 Defects in Semi-Insulating SiC Substrates   [ 195 K ]
  Authors: Nguyen Tien Son, Björn Magnusson, Z. Zolnai, Alexsandre Ellison, Erik Janzén
• p51 Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth   [ 128 K ]
  Authors: Matthias Bickermann, Dieter Hofmann, Thomas L. Straubinger, Roland Weingärtner, Albrecht Winnacker
• p55 PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals   [ 189 K ]
  Authors: Michael Rasp, Thomas L. Straubinger, Erwin Schmitt, Matthias Bickermann, Horst Sadowski, Sergey A. Reshanov