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Silicon Carbide and Related Materials - 2002

Volumes 433 - 436
doi: 10.4028/www.scientific.net/MSF.433-436
Paper Titles published in this Main Theme:
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Paper Title Page

Sponsors and Committees

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Preface

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Overview

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Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate

Authors: Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta

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Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling

Authors: Peter Wellmann, Z.G. Herro, M. Selder, F. Durst, Roland Püsche, Martin Hundhausen, Lothar Ley, Albrecht Winnacker

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Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

Authors: Shinichi Nishizawa, Yumi Michikawa, Tomohisa Kato, Fusao Hirose, Naoki Oyanagi, Kazuo Arai

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On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates

Authors: D. Schulz, M. Lechner, H. J. Rost, D. Siche, Jürgen Wollweber

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Growth of High Quality p-Type 4H-SiC Substrates by HTCVD

Authors: Björn Sundqvist, Alexsandre Ellison, A.K. Jonsson, Anne Henry, Christer Hallin, Peder Bergman, Björn Magnusson, Erik Janzén

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Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation

Authors: Didier Chaussende, Francis Baillet, Ludovic Charpentier, Etienne Pernot, Michel Pons, Roland Madar

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Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation

Authors: E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, Yu.A. Vodakov, S.Yu. Karpov, Yu.A. Makarov, H. Helava

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