Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates |
| Journal |
Materials Science Forum (Volumes 433 - 436) |
| Volume |
Silicon Carbide and Related Materials - 2002 |
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
1003-0 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.1003 |
| Citation |
Francisco M. Morales et al., 2003, Materials Science Forum, 433-436, 1003 |
| Online since |
September, 2003 |
| Authors |
Francisco M. Morales, A. Ponce, S.I. Molina, Daniel Araújo, R. García, J. Ristic, M.-A. Sánchez-García, Enrique Calleja, Volker Cimalla, Jörg Pezoldt |
| Keywords |
Galium Nitride (GaN), MBE, RTCVD, Si Carbonisation , Silicon Carbide (SiC) |
| Full Paper |
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