Paper Title:
Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
107-110
DOI
10.4028/www.scientific.net/MSF.433-436.107
Citation
O. A. Agueev, A. M. Svetlichnyi, A.G. Klovo, A.N. Kocherov, D.A. Izotovs, "Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution", Materials Science Forum, Vols. 433-436, pp. 107-110, 2003
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kazuki Takahashi, Kanji Yasui, Maki Suemitsu, Ariyuki Kato, Yuichiro Kuroki, Masasuke Takata, Tadashi Akahane
Abstract:Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG)...
261
Authors: Albert A. Burk, Michael J. O'Loughlin, Joseph J. Sumakeris, C. Hallin, Elif Berkman, Vijay Balakrishna, Jonathan Young, Lara Garrett, Kenneth G. Irvine, Adrian R. Powell, Y. Khlebnikov, R.T. Leonard, C. Basceri, Brett A. Hull, Anant K. Agarwal
Abstract:The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer,...
77
Authors: Wlodek Strupiński, Rafał Bożek, Jolanta Borysiuk, Kinga Kościewicz, Andrzej Wysmolek, Roman Stepniewski, Jacek M. Baranowski
Abstract:The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the...
199
Authors: Nicolò Piluso, Massimo Camarda, Ruggero Anzalone, Andrea Severino, Antonino La Magna, Giuseppe D'Arrigo, Francesco La Via
Abstract:Raman microscopy has been used to study the stress distribution on 3C-SiC/Si(100) micro-machined free standing structures. Linear scans along...
141
Authors: Lin Dong, Guo Sheng Sun, Jun Yu, Guo Guo Yan, Wan Shun Zhao, Lei Wang, Xin He Zhang, Xi Guang Li, Zhan Guo Wang
Chapter 3: Epitaxial Growth 4H SiC
Abstract:We present our recent results on of 10 × 100 mm 4H-SiC epitaxy by a warm-wall planetary reactor at a growth rate of 10 μm/h. The epilayers...
239