Paper Title:
Crystal Interface Shape Simulation during SiC Sublimation Growth
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
111-114
DOI
10.4028/www.scientific.net/MSF.433-436.111
Citation
K. Böttcher, D. Schulz, "Crystal Interface Shape Simulation during SiC Sublimation Growth", Materials Science Forum, Vols. 433-436, pp. 111-114, 2003
Online since
September 2003
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