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Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

Journal Materials Science Forum (Volumes 433 - 436)
Volume Silicon Carbide and Related Materials - 2002
Edited by Peder Bergman and Erik JanzĂ©n
Pages 13-16
DOI 10.4028/www.scientific.net/MSF.433-436.13
Citation Shinichi Nishizawa et al., 2003, Materials Science Forum, 433-436, 13
Online since September, 2003
Authors Shinichi Nishizawa, Yumi Michikawa, Tomohisa Kato, Fusao Hirose, Naoki Oyanagi, Kazuo Arai
Keywords Bulk Growth, Numerical Simulation, Silicon Carbide (SiC), Stress, Sublimation
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