Paper Title:
4H-SiC Epitaxial Growth for High-Power Devices
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
131-136
DOI
10.4028/www.scientific.net/MSF.433-436.131
Citation
H. Tsuchida, I. Kamata, T. Jikimoto, T. Miyanagi, K. Izumi, "4H-SiC Epitaxial Growth for High-Power Devices", Materials Science Forum, Vols. 433-436, pp. 131-136, 2003
Online since
September 2003
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