Paper Title:
Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
145-148
DOI
10.4028/www.scientific.net/MSF.433-436.145
Citation
R. J. Wang, I. Bhat, T. P. Chow, "Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors", Materials Science Forum, Vols. 433-436, pp. 145-148, 2003
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Masahiro Okumiya, Satoshi Hagi, Kazuya Orita, Yoshiki Tsunekawa, Yoshito Umeda, Takayuki Nagai
Abstract:Acetylene and ethylene are frequently used in vacuum carburizing in Japan. In this study the natural gas which is available from the...
97
Authors: Dong Mei Zhu, Hong Na Du, Fa Luo, Wan Cheng Zhou
Abstract:Porous C/C composite with certain porosity prepared by Chemical vapor infiltration (CVI) was chosen as the preforms to develop the C/C-SiC...
1501
Authors: M.A. Falkenberg, D. Abdelbarey, Vitaly V. Kveder, Michael Seibt
Abstract:The efficiency of solar cells produced from crystalline silicon materials is considerably affected by the presence of metal impurities. In...
229
Authors: De Hua Xie
Chapter 7: Environmental Engineering and Environmental Protection
Abstract:The removal of Cu2+ in water via an ion-exchange membrane under no external voltage condition was studied in the research, and effects such...
954
Authors: De Wen Gao, Tian Lan Yin, Guang Ming Wu, Guang Jian Xing, Yao Ding, Yang Zhou
Chapter 1: New and Advanced Materials, Materials Structure and Technologies
Abstract:AZO precursor solution was prepared with dihydrate zinc acetate as raw materials, ethylene glycol monomethyl ether and ethanol as solvent,...
60