Paper Title:
Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
149-152
DOI
10.4028/www.scientific.net/MSF.433-436.149
Citation
S. Nakamura, T. Kimoto, H. Matsunami, "Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition", Materials Science Forum, Vols. 433-436, pp. 149-152, 2003
Online since
September 2003
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