Paper Title:
Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
161-164
DOI
10.4028/www.scientific.net/MSF.433-436.161
Citation
K. Fujihira, T. Kimoto, H. Matsunami, "Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD", Materials Science Forum, Vols. 433-436, pp. 161-164, 2003
Online since
September 2003
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