Paper Title:
Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
165-168
DOI
10.4028/www.scientific.net/MSF.433-436.165
Citation
C. Sartel, J. M. Bluet, V. Soulière, I. El Harrouni, Y. Monteil, M. Mermoux, G. Guillot, "Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System", Materials Science Forum, Vols. 433-436, pp. 165-168, 2003
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Amitesh Shrivastava, Paul B. Klein, E.R. Glaser, Joshua D. Caldwell, A.V. Bolotnikov, Tangali S. Sudarshan
Abstract:In this work we report the measurement of minority carrier lifetimes using the time resolved photoluminescence technique. It was found that...
291
Authors: Ai Min Wu, Hong Yun Yue, X.Y. Zhang, Fu Wen Qin, T.J. Li, Xin Jiang
Abstract:The silicon nitride films have been deposited by Electron Cyclotron Resonance-plasma enhanced chemical vapor deposition (ECR-PECVD) method at...
1712
Authors: Xu Ming Zhang, Jian Jun Wang, Chun Ming Liu, Yue Jun Ying
Abstract:Silane treatment has been applied as a chromium free multi-metal surface treatment for its characteristics of corrosion protection, adhesion...
1947