Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System |
| Journal |
Materials Science Forum (Volumes 433 - 436) |
| Volume |
Silicon Carbide and Related Materials - 2002 |
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
165-168 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.165 |
| Citation |
C. Sartel et al., 2003, Materials Science Forum, 433-436, 165 |
| Online since |
September, 2003 |
| Authors |
C. Sartel, Jean Marie Bluet, Veronique Soulière, I. El Harrouni, Yves Monteil, Michel Mermoux, Gérard Guillot |
| Keywords |
C-V Measurement, Growth Rate, Homoepitaxy, LTPL, Raman Spectroscopy, Silane/Propane System |
| Full Paper |
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