On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates |
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| Journal | Materials Science Forum (Volumes 433 - 436) |
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| Volume | Silicon Carbide and Related Materials - 2002 |
| Edited by | Peder Bergman and Erik Janzén |
| Pages | 17-20 |
| DOI | 10.4028/www.scientific.net/MSF.433-436.17 |
| Online since | September, 2003 |
| Authors | D. Schulz, M. Lechner, H. J. Rost, D. Siche, Jürgen Wollweber |
| Keywords | 4H-SiC, Physical Vapor Transport, Single Crystal Growth, Surface Morphology |
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