On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates |
| Journal |
Materials Science Forum (Volumes 433 - 436) |
| Volume |
Silicon Carbide and Related Materials - 2002 |
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
17-20 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.17 |
| Citation |
D. Schulz et al., 2003, Materials Science Forum, 433-436, 17 |
| Online since |
September, 2003 |
| Authors |
D. Schulz, M. Lechner, H. J. Rost, D. Siche, Jürgen Wollweber |
| Keywords |
4H-SiC, Physical Vapor Transport, Single Crystal Growth, Surface Morphology |
| Full Paper |
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