Paper Title:
Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
185-188
DOI
10.4028/www.scientific.net/MSF.433-436.185
Citation
H. Saitoh, T. Kimoto, H. Matsunami, "Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD", Materials Science Forum, Vols. 433-436, pp. 185-188, 2003
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Masahiro Okumiya, Satoshi Hagi, Kazuya Orita, Yoshiki Tsunekawa, Yoshito Umeda, Takayuki Nagai
Abstract:Acetylene and ethylene are frequently used in vacuum carburizing in Japan. In this study the natural gas which is available from the...
97
Authors: Han Bing Qi, Qiu Shi Wang, Dong Li, Hao Ran Bai
Chapter 1: Development and Utilization of Solar Energy
Abstract:Our country building energy consumption is amazing, building ventilation energy consumption is about more than 20% of the whole energy...
307
Authors: Feng Tian, Zhen Bin Gao, Yi Cai Sun
Chapter 12: Measuring and Testing Instruments
Abstract:A flow sensor for liquids, based on the principle of fluid-structure heat transfer is presented. The heater and thermistor are integrated and...
1213
Authors: Pao Chi Chen, Sheng Zhong Lin
Chapter 5: Technologies and Materials in Chemical Engineering
Abstract:This work uses a continuous bubble-column scrubber for the absorption of CO2 with a 5M MEA solution under a constant pH...
153