Paper Title:
Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
197-200
DOI
10.4028/www.scientific.net/MSF.433-436.197
Citation
T. Kimoto, K. Danno, K. Fujihira, H. Shiomi, H. Matsunami, "Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes", Materials Science Forum, Vols. 433-436, pp. 197-200, 2003
Online since
September 2003
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