Paper Title:
Growth of p-Type SiC Layer by Sublimation Epitaxy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
205-208
DOI
10.4028/www.scientific.net/MSF.433-436.205
Citation
S. Ohta, T. Furusho, H. Takagi, S. Ohshima, S. Nishino, "Growth of p-Type SiC Layer by Sublimation Epitaxy", Materials Science Forum, Vols. 433-436, pp. 205-208, 2003
Online since
September 2003
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Price
$32.00
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