Paper Title:
Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
209-212
DOI
10.4028/www.scientific.net/MSF.433-436.209
Citation
Y. Okui, C. Jacob , S. Ohshima, S. Nishino, "Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate", Materials Science Forum, Vols. 433-436, pp. 209-212, 2003
Online since
September 2003
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