Paper Title:
Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
21-24
DOI
10.4028/www.scientific.net/MSF.433-436.21
Citation
B. Sundqvist, A. Ellison, A.K. Jonsson, A. Henry, C. Hallin, P. Bergman, B. Magnusson, E. Janzén, "Growth of High Quality p-Type 4H-SiC Substrates by HTCVD", Materials Science Forum, Vols. 433-436, pp. 21-24, 2003
Online since
September 2003
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