Paper Title:
Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
213-216
DOI
10.4028/www.scientific.net/MSF.433-436.213
Citation
P. G. Neudeck, J. A. Powell, D. J. Spry, A. J. Trunek, X. Huang, W. M. Vetter, M. Dudley, M. Skowronski, J. Q. Liu, "Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy", Materials Science Forum, Vols. 433-436, pp. 213-216, 2003
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Philip G. Neudeck, J. Anthony Powell, Andrew J. Trunek, David J. Spry
169
Authors: Andrew J. Trunek, Philip G. Neudeck, David J. Spry
Abstract:We report on further observations of homoepitaxially grown 4H silicon carbide (SiC) cantilevers on commercial on-axis mesa patterned...
247
Authors: Joseph J. Sumakeris, Brett A. Hull, Michael J. O'Loughlin, Marek Skowronski, Vijay Balakrishna
Abstract:We detail a comprehensive approach to preparing epiwafers for bipolar SiC power devices which entails etching the substrate, growing a...
77
Authors: Ping Wu, Murugesu Yoganathan, Ilya Zwieback, Yi Chen, Michael Dudley
Abstract:Etching of 4H-SiC wafers in molten KOH as a method for micropipe and dislocation density analysis was investigated. The obtained results...
333
Authors: Andrew J. Trunek, J. Anthony Powell, Philip G. Neudeck, M. Mrdenovich
Abstract:We report on new observations made, when 4H-SiC, Si-face substrate mesas, having either low tilt-angle (< 1°) with steps or step-free top...
593