Paper Title:
Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
225-228
DOI
10.4028/www.scientific.net/MSF.433-436.225
Citation
H. Muto, T. Asano, T. Kusumori, "Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization", Materials Science Forum, Vols. 433-436, pp. 225-228, 2003
Online since
September 2003
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