Paper Title:
Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
229-232
DOI
10.4028/www.scientific.net/MSF.433-436.229
Citation
H. Shimizu, K. Hisada, "Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates", Materials Science Forum, Vols. 433-436, pp. 229-232, 2003
Online since
September 2003
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