Paper Title:
Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
253-256
DOI
10.4028/www.scientific.net/MSF.433-436.253
Citation
H. J. Chung , J. Q. Liu, A. Henry, M. Skowronski, "Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing", Materials Science Forum, Vols. 433-436, pp. 253-256, 2003
Online since
September 2003
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