Paper Title:
Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
265-268
DOI
10.4028/www.scientific.net/MSF.433-436.265
Citation
E. Pernot, I. El Harrouni, M. Mermoux, J. M. Bluet, M. Anikin, D. Chaussende, M. Pons, R. Madar, "Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging", Materials Science Forum, Vols. 433-436, pp. 265-268, 2003
Online since
September 2003
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