Paper Title:
Doping-Related Strain in n-Doped 4H-SiC Crystals
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
269-272
DOI
10.4028/www.scientific.net/MSF.433-436.269
Citation
H. Jacobsson, J. Birch, U. Lindefelt, C. Hallin, A. Henry, R. Yakimova, E. Janzén, "Doping-Related Strain in n-Doped 4H-SiC Crystals", Materials Science Forum, Vols. 433-436, pp. 269-272, 2003
Online since
September 2003
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