Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate |
| Journal |
Materials Science Forum (Volumes 433 - 436) |
| Volume |
Silicon Carbide and Related Materials - 2002 |
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
3-8 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.3 |
| Citation |
Hiroyuki Nagasawa et al., 2003, Materials Science Forum, 433-436, 3 |
| Online since |
September, 2003 |
| Authors |
Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta |
| Keywords |
3C-SiC, Anisotropy, Hall-Effect, Hetero-Epitaxy, Twin Boundary, Undulant-Si, XRC |
| Full Paper |
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