Paper Title:
Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
321-324
DOI
10.4028/www.scientific.net/MSF.433-436.321
Citation
I. G. Ivanov, A. Ellison, E. Janzén, "Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum", Materials Science Forum, Vols. 433-436, pp. 321-324, 2003
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Won Woo Lee, Mary Ellen Zvanut
Abstract:The purpose of this study is to determine the vanadium defect levels in semi-insulating 4H-SiC and 6H-SiC using optical admittance...
647
Authors: Nguyen Tien Son, Patrick Carlsson, Andreas Gällström, Björn Magnusson, Erik Janzén
Abstract:Semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range 5.5×1015 –1.1×1017 cm–3 were studied by electron paramagnetic...
401
Authors: Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Shinobu Onoda, Takeshi Ohshima
Abstract:The mechanisms for the reduction in the hole concentration in lightly Al-doped p-type 4H-SiC epilayers by electron irradiation as well as in...
181
Authors: Tamar Tchelidze, Tamaz Kereselidze
Chapter 9: Nano-Sized Layers and Structures
Abstract:We investigated defect composition in ZnO quantum structures – quantum wells and nanowires doped with Ag impurity. We investigated the...
391