Paper Title:
Raman Imaging Analysis of SiC Wafers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
353-356
DOI
10.4028/www.scientific.net/MSF.433-436.353
Citation
M. Mermoux, A. Crisci, F. Baillet, "Raman Imaging Analysis of SiC Wafers", Materials Science Forum, Vols. 433-436, pp. 353-356, 2003
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Eiji Kurimoto, M. Hangyo, Hiroshi Harima, Kenji Kisoda, Taro Nishiguchi, Shigehiro Nishino, Shinichi Nakashima, Masakazu Katsuno, Noboru Ohtani
621
Authors: S. Lazić, J.M. Calleja, F.B. Naranjo, S. Fernández, Enrique Calleja
Abstract:We present resonant Raman scattering measurements on strained and relaxed InxGa1-xN/GaN multiple quantum wells. The pseudomorphic sample...
19
Authors: T. Kitamura, Shinichi Nakashima, Tomohisa Kato, K. Kojima, Hajime Okumura
Abstract:We characterized the 4H- and 6H-SiC bulk crystals with graded doping and epitaxial films with various carrier densities by Raman scattering...
501
Authors: Nicolò Piluso, Andrea Severino, Massimo Camarda, Andrea Canino, Antonino La Magna, Francesco La Via
Abstract:Micro-Raman spectroscopy has been used to study the dependence between the carrier concentration and electrical mobility in n-doped 3C-SiC...
221
Authors: Y.J. Shin, W.J. Kim, H.Y. Kim, W. Bahng
Chapter 6: Interface Characterization
Abstract:Micro-Raman spectroscopy is an excellent non-destructive analysis method, which compensates for disadvantages of KOH method. Raman shift of...
481