Paper Title:
Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
371-374
DOI
10.4028/www.scientific.net/MSF.433-436.371
Citation
M.-L. David, G. Alfieri, E. V. Monakhov, A. Hallén, J. F. Barbot, B. G. Svensson, "Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC", Materials Science Forum, Vols. 433-436, pp. 371-374, 2003
Online since
September 2003
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