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Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy

Journal Materials Science Forum (Volumes 433 - 436)
Volume Silicon Carbide and Related Materials - 2002
Edited by Peder Bergman and Erik JanzĂ©n
Pages 375-378
DOI 10.4028/www.scientific.net/MSF.433-436.375
Citation Vito Raineri et al., 2003, Materials Science Forum, 433-436, 375
Online since September, 2003
Authors Vito Raineri, Lucia Calcagno, Filippo Giannazzo, D. Goghero, F. Musumeci, Fabrizio Roccaforte, Francesco La Via
Keywords Dopant Activation, Ion-Implantation, Scanning Capacitance Microscopy
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