Paper Title:
High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
387-390
DOI
10.4028/www.scientific.net/MSF.433-436.387
Citation
A. Schöner, K. Fujihira, T. Kimoto, H. Matsunami, "High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers", Materials Science Forum, Vols. 433-436, pp. 387-390, 2003
Online since
September 2003
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