Sublimation-Grown Semi-Insulating SiC for High Frequency Devices |
| Journal |
Materials Science Forum (Volumes 433 - 436) |
| Volume |
Silicon Carbide and Related Materials - 2002 |
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
39-44 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.39 |
| Citation |
Stephan G. Müller et al., 2003, Materials Science Forum, 433-436, 39 |
| Online since |
September, 2003 |
| Authors |
Stephan G. Müller, M.F. Brady, W.H. Brixius, R.C. Glass, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John J. Palmour, Calvin H. Carter Jr. |
| Keywords |
Carbon Vacancy, DLTS, EPR, Micropipe, Resistivity, Semi-insulating (SI), Sublimation Growth, Thermal Conductivity (TC) |
| Full Paper |
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