Paper Title:
Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
435-438
DOI
10.4028/www.scientific.net/MSF.433-436.435
Citation
R. Ono, M. Fujimaki, H. J. Na, S. Tanimoto, T. Shinohe, T. Yatsuo, H. Okushi, K. Arai, "Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates", Materials Science Forum, Vols. 433-436, pp. 435-438, 2003
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Francesco La Via, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri, Francesco Moscatelli, Andrea Scorzoni, G.C. Cardinali
827
Authors: Rositza Yakimova, Mikael Syväjärvi, R.R Ciechonski, Qamar-ul Wahab
201
Authors: Elena Tschumak, Katja Tonisch, Jörg Pezoldt, Donat J. As
Abstract:Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates were studied by high resolution X-ray diffraction....
943
Authors: Jörg Pezoldt, Thomas Stauden, Florentina Niebelschütz, Mohamad Adnan Alsioufy, Richard Nader, Pierre M. Masri
Abstract:Germanium modified silicon surfaces in combination with two step epitaxial growth technique consisting in conversion of the Si(100) substrate...
159
Authors: Peder Bergman, I.D. Booker, Louise Lilja, Jawad Ul Hassan, Erik Janzén
Chapter 3: Physical Properties and Characterization of SiC
Abstract:In this report we present homoepitaxial growth of 4H-SiC on the Si-face of nominally on-axis substrates with diameter up to 100 mm in a...
289