Paper Title:
Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
443-446
DOI
10.4028/www.scientific.net/MSF.433-436.443
Citation
T. Hatakeyama, T. Watanabe, M. Kushibe, K. Kojima, S. Imai, T. Suzuki, T. Shinohe, T. Tanaka, K. Arai, "Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation", Materials Science Forum, Vols. 433-436, pp. 443-446, 2003
Online since
September 2003
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