Paper Title:
Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
447-450
DOI
10.4028/www.scientific.net/MSF.433-436.447
Citation
H. Matsuura, K. Sugiyama, K. Nishikawa, T. Nagata, N. Fukunaga, "Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC", Materials Science Forum, Vols. 433-436, pp. 447-450, 2003
Online since
September 2003
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