Paper Title:
Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
455-458
DOI
10.4028/www.scientific.net/MSF.433-436.455
Citation
L. Scaltrito, S. Porro, F. Giorgis, P. Mandracci, M. Cocuzza, C. F. Pirri, C. Ricciardi, S. Ferrero, G. Richieri, C. Sgorlon, L. Merlin, A. Cavallini, A. Castaldini, "Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes", Materials Science Forum, Vols. 433-436, pp. 455-458, 2003
Online since
September 2003
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