Paper Title:
Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
463-466
DOI
10.4028/www.scientific.net/MSF.433-436.463
Citation
I. Pintilie, L. Pintilie, K. Irmscher, B. Thomas, "Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters", Materials Science Forum, Vols. 433-436, pp. 463-466, 2003
Online since
September 2003
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