Paper Title:

Nitrogen-Vacancy Complexes in SiC – Final Annealing Products of the Silicon Vacancy?

Periodical Materials Science Forum (Volumes 433 - 436)
Main Theme Silicon Carbide and Related Materials - 2002
Edited by Peder Bergman and Erik Janzén
Pages 481-486
DOI 10.4028/www.scientific.net/MSF.433-436.481
Citation Uwe Gerstmann et al., 2003, Materials Science Forum, 433-436, 481
Online since September, 2003
Authors Uwe Gerstmann, E. Rauls, Thomas Frauenheim, Harald Overhof
Keywords Annealing, Diamond, Nitrogen, Passivation, Silicon Carbide (SiC), Vacancy
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