Paper Title:
A Deep Erbium-Related Bandgap State in 4H Silicon Carbide
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
487-490
DOI
10.4028/www.scientific.net/MSF.433-436.487
Citation
G. Pasold, F. Albrecht, J. Grillenberger, U. Grossner, C. Hülsen, R. Sielemann, W. Witthuhn, "A Deep Erbium-Related Bandgap State in 4H Silicon Carbide", Materials Science Forum, Vols. 433-436, pp. 487-490, 2003
Online since
September 2003
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