Paper Title:
Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
51-54
DOI
10.4028/www.scientific.net/MSF.433-436.51
Citation
M. Bickermann, D. Hofmann, T. L. Straubinger, R. Weingärtner, A. Winnacker, "Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth", Materials Science Forum, Vols. 433-436, pp. 51-54, 2003
Online since
September 2003
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