Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth |
| Journal |
Materials Science Forum (Volumes 433 - 436) |
| Volume |
Silicon Carbide and Related Materials - 2002 |
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
51-54 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.51 |
| Citation |
Matthias Bickermann et al., 2003, Materials Science Forum, 433-436, 51 |
| Online since |
September, 2003 |
| Authors |
Matthias Bickermann, Dieter Hofmann, Thomas L. Straubinger, Roland Weingärtner, Albrecht Winnacker |
| Keywords |
Bulk Growth, Compensation Mechanism, Homogeneous Incorporation, Semi-insulating (SI), Vanadium Doping |
| Full Paper |
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