Paper Title:
A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
535-538
DOI
10.4028/www.scientific.net/MSF.433-436.535
Citation
P. Deák, A. Gali, Z. Hajnal, T. Frauenheim, N. T. Son, E. Janzén, W. J. Choyke, P. Ordejón, "A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC", Materials Science Forum, Vols. 433-436, pp. 535-538, 2003
Online since
September 2003
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