Paper Title:
A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC
| Periodical |
Materials Science Forum (Volumes 433 - 436)
|
| Main Theme |
Silicon Carbide and Related Materials - 2002
|
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
535-538 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.535 |
| Citation |
Peter Deák et al., 2003, Materials Science Forum, 433-436, 535 |
| Online since |
September, 2003 |
| Authors |
Peter Deák, Adam Gali, Z. Hajnal, Thomas Frauenheim, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke, P. Ordejón |
| Keywords |
Interface States (or Traps), SiO2, Theory |
| Price |
US$ 28,- |