Paper Title:

A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC

Periodical Materials Science Forum (Volumes 433 - 436)
Main Theme Silicon Carbide and Related Materials - 2002
Edited by Peder Bergman and Erik Janzén
Pages 535-538
DOI 10.4028/www.scientific.net/MSF.433-436.535
Citation Peter Deák et al., 2003, Materials Science Forum, 433-436, 535
Online since September, 2003
Authors Peter Deák, Adam Gali, Z. Hajnal, Thomas Frauenheim, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke, P. Ordejón
Keywords Interface States (or Traps), SiO2, Theory
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