Paper Title:
A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
547-550
DOI
10.4028/www.scientific.net/MSF.433-436.547
Citation
H.Ö. Ólafsson, E. Ö. Sveinbjörnsson, T.E. Rudenko, V.I. Kilchytska, I.P. Tyagulski, I.N. Osiyuk, "A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface", Materials Science Forum, Vols. 433-436, pp. 547-550, 2003
Online since
September 2003
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